Date: Tuesday, November 9, 2010
Time: 2PM EST / 11AM PST
Sponsor: Tegal Corporation
Speaker: Nicolas Launay, Research and Development Director and General Manager, Tegal France
Archive: to request a copy of the webinar slides, please email Mike Pinelis at mike@memsinvestorjournal.com
Topics include:
* 3D integration and Through Substrate Via perspectives – observations from Academia, commercial Compound Semiconductor fabrication, and commercial MEMS fabrication
* In-depth review of Silex Microsystems 3D – TSV solutions
* Development goals for EU JDP projects targeting commercial 3D-IC: Verdi (high-density TSV), 3Dice (mid-density TSV), and Smartstack (low-density TSV)
* Tegal silicon DRIE 3D-IC development activities and results
* Silicon DRIE for the TSV Age: future challenges
Webinar abstract:
Through Substrate Via (TSV) etching is a key process fabrication module employed in 3D-IC technologies. Silicon DRIE processes for TSV etching benefit greatly from the large body of knowledge readily available from two important sources. For deep etching of features and structures in silicon, the plasma etch processes developed for MEMS device fabrication can be readily ported over to the TSV etch module for 3D technology platforms. And, for a general understanding of high volume manufacturing (HVM) requirements and challenges for through-wafer processing technologies, the compound semiconductor industry has routinely and successfully employed backside via structures for many years.
In this webinar, Tegal reviews the work already performed in TSV etching by the compound semiconductor industry, and the TSV work already developed for MEMS device fabrication. We then present an analysis of the specific requirements of TSV etching for silicon device 3D-IC technology as identified by several joint development programs ongoing now in Europe, and we present the silicon DRIE process results Tegal has contributed to these programs. We conclude by offering our thinking about future challenges in silicon DRIE for the coming TSV Age.
Speaker bio:
Nicolas Launay is the Research and Development Director and General Manager of Tegal France, a Tegal Corporation subsidiary, where he is responsible for leading Tegal’s technical research and development activities for Deep Reactive Ion Etching products. He holds a Master’s degree in Physics from Orléans University (France), and has worked for more than 10 years in the fields of semiconductor and MEMS technical and process engineering. Mr. Launay most recently held a technical management position at Alcatel Micro Machining Systems in Annecy, France, before joining Tegal in early 2009. Nicolas can be reached at nlaunay@tegal.com.
About the sponsor:
Tegal Corporation designs, manufactures, markets and services best-of-breed Deep Reactive Ion Etching (DRIE) systems for the fabrication of advanced MEMS, power ICs and optoelectronic devices found in products like smart phones, digital cameras and imagers, and GPS units. Tegal combines proven expertise with practical system strategies to deliver application-specific DRIE solutions that are robust and reliable, and deliver exceptional process quality and high yields at a lower overall cost of ownership. Headquartered in Petaluma, California, and with a development center in Annecy, France, Tegal has more than 35 years of expertise and innovation in specialized plasma etch technologies. For more information, please go to: http://www.tegal.com.